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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M41ST85WMH6 датащи(PDF) 18 Page - STMicroelectronics |
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M41ST85WMH6 датащи(HTML) 18 Page - STMicroelectronics |
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18 / 41 page  Operating modes M41ST85W 18/41 If data retention lifetime is a critical parameter for the system, it is important to review the data retention current specifications for the particular SRAMs being evaluated. Most SRAMs specify a data retention current at 3.0 volts. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally at elevated temperatures). The system level requirements will determine the choice of which value to use. The data retention current value of the SRAMs can then be added to the IBAT value of the M41ST85W to determine the total current requirements for data retention. The available battery capacity for the SNAPHAT® top of your choice can then be divided by this current to determine the amount of data retention available (see Table 19 on page 39). For a further more detailed review of lifetime calculations, please see Application Note AN1012. |
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