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L6390D датащи(PDF) 18 Page - STMicroelectronics

номер детали L6390D
подробное описание детали  High-voltage high and low side driver
PDF  22 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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L6390D датащи(HTML) 18 Page - STMicroelectronics

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Bootstrap driver
L6390
18/22
Equation 3
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:
Equation 4
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 7.
Bootstrap driver
V
drop
I
ch
e
arg Rdson
V
drop
Q
gate
T
ch
e
arg
------------------R
dson
==
V
drop
30nC
5
µs
---------------
120
Ω 0.7V
=
TO LOAD
D99IN1067
H.V.
HVG
ab
LVG
HVG
LVG
CBOOT
TO LOAD
H.V.
CBOOT
DBOOT
BOOT
V
CC
VCC
OUT
OUT
BOOT



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