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ST72311R датащи(PDF) 153 Page - STMicroelectronics |
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ST72311R датащи(HTML) 153 Page - STMicroelectronics |
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153 / 164 page ![]() ST72311R, ST72511R, ST72512R, ST72532R 153/164 ADC CHARACTERISTICS (Cont’d) ADC Accuracy with VDD=5.0V Figure 92. ADC Accuracy Characteristics Notes: 1. Data based on characterization results over the whole temperature range, monitored in production. 2. ADC Accuracy vs. Negative Injection Current: For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6µA and the effect on the ADC accuracy is a loss of 1 LSB for each 10K Ω increase of the external analog source impedance. This effect on the ADC accuracy has been observed under worst-case conditions for injection: - negative injection - injection to an Input with analog capability, adjacent to the enabled Analog Input -at 5V VDD supply, and worst case temperature. Symbol Parameter Conditions Min Max Unit |ET| Total unadjusted error 2) fCPU=8MHz, fADC=4MHz 1) 1.5 LSB EO Offset error 2) -1 1 EG Gain Error 2) -0.5 0.5 |ED| Differential linearity error 2) 1 |EL| Integral linearity error 2) 1 EO EG 1 LSBIDEAL 1LS B IDE AL V DDA V SSA – 256 ---------------------------------------- - = Vin (LSBIDEAL) (1) Example of an actual transfer curve (2) The ideal transfer curve (3) End point correlation line ET=Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO=Offset Error: deviation between the first actual transition and the first ideal one. EG=Gain Error: deviation between the last ideal transition and the last actual one. ED=Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL=Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Digital Result ADCDR 255 254 253 5 4 3 2 1 0 7 6 12 34 567 253 254 255 256 (1) (2) ET ED EL (3) VDDA VSSA |
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