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T410 датащи(PDF) 24 Page - STMicroelectronics |
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T410 датащи(HTML) 24 Page - STMicroelectronics |
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24 / 84 page ![]() ST52T410/ST52T420/E430 24/84 3 EPROM EPROM memory provides an on-chip user- programmable non-volatile memory, which allows fast and reliable storage of user data. EPROM memory can be locked by the user. In fact, a memory location called Lock Cell is devoted to lock EPROM and avoid external operations. A software identification code, called ID CODE, distinguishes which software version is stored in the memory. 32 kbits of memory space with an 8-bit internal parallelism (up to 4 kbytes) addressed by a 12-bit bus are available. The data bus is 8 bits. Memory has a double supply: VPP is equal to 12V ±5% in Programming Phase or to V SS during Working Phase. VDD is equal to 5V±10%. ST52T410/ST52x420 EPROM memory is divided into three main blocks (see Figure ): s Interrupt Vectors memory block (3 through 17) contains the addresses for the interrupt routines. Each address is composed of three bytes. Figure 3.1 Program Memory Organization s Mbfs Setting memory block (18 through MemAdd) contains the coordinates of the vertexes of every Mbf defined in the program. s The maximum value of MemAdd is 1023. This area is dynamically assigned according to the size of the fuzzy routines. The unused memory area, if any, is assigned to the Program Instruction Set memory block. s The Program Instructions Set memory block (MemAdd through 4095) contains the instruction set of the user program. Locations 0, 1 and 2 contain the address of the first microcode instruction.The operations that can be performed on EPROM during the Programming Phase are: Stand By, Memory Writing, Reading and Verify/Margin Mode, Memory Lock, IDCode Writing and Verify. |
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