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M58LW032D датащи(PDF) 19 Page - STMicroelectronics

номер детали M58LW032D
подробное описание детали  32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory
PDF  50 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LW032D датащи(HTML) 19 Page - STMicroelectronics

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M58LW032D
Table 8. Byte-Wide Read Protection Register
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6µs, effective word programming time 12µs.
4. Maximum value measured at worst case conditions for both temperature and VDD after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and VDD.
Word
Use
A8A7A6A5
A4A3A2A1
Lock
Factory, User
100
00
000
Lock
Factory, User
100
00
000
0
Factory (Unique ID)
100
00
001
1
Factory (Unique ID)
100
00
001
2
Factory (Unique ID)
100
00
010
3
Factory (Unique ID)
100
00
010
4
Factory (Unique ID)
100
00
011
5
Factory (Unique ID)
100
00
011
6
Factory (Unique ID)
100
00
100
7
Factory (Unique ID)
100
00
100
8
User
100
00
101
9
User
100
00
101
A
User
100
00
110
B
User
100
00
110
C
User
100
00
111
D
User
100
00
111
E
User
100
01
000
F
User
100
01
000
Parameters
M58LW032D
Unit
Min
Typ(1,2)
Max(2)
Block (1Mb) Erase
1.2
4.8(4)
s
Chip Program (Write to Buffer)
24
72(4)
s
Chip Erase Time
37
110 (4)
s
Program Write Buffer
192 (3)
576 (4)
µs
Word/Byte Program Time
(Word/Byte Program command)
16
48 (4)
µs
Program Suspend Latency Time
1
20 (5)
µs
Erase Suspend Latency Time
1
25 (5)
µs
Block Protect Time
18
30 (5)
µs
Blocks Unprotect Time
0.75
1.2 (5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years



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