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M58LW032D датащи(PDF) 16 Page - STMicroelectronics

номер детали M58LW032D
подробное описание детали  32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory
PDF  50 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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M58LW032D датащи(HTML) 16 Page - STMicroelectronics

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the Program/Erase Controller. Once the command
is issued subsequent Bus Read operations read
the Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Block Protect operation the memory will
only accept the Read Status Register command.
All other commands will be ignored. Typical Block
Protection times are given in Table 9.
The Block Protection bits are non-volatile, once
set they remain set through reset and power-
down/power-up. They are cleared by a Blocks Un-
protect command.
See APPENDIX C., Figure 20., Block Protect
Flowchart and Pseudo Code, for a suggested flow-
chart on using the Block Protect command.
Blocks Unprotect Command. The Blocks Un-
protect command is used to unprotect all of the
blocks. Two Bus Write cycles are required to issue
the Blocks Unprotect command; the second Bus
Write cycle starts the Program/Erase Controller.
Once the command is issued subsequent Bus
Read operations read the Status Register. See the
section on the Status Register for details on the
definitions of the Status Register bits.
During the Block Unprotect operation the memory
will only accept the Read Status Register com-
mand. All other commands will be ignored. Typical
Block Protection times are given in Table 9.
See APPENDIX C., Figure 21., Block Unprotect
Flowchart and Pseudo Code, for a suggested flow-
chart on using the Block Unprotect command.
Protection Register Program Command. The
Protection Register Program command is used to
Program the 64 bit user segment of the Protection
Register. Two write cycles are required to issue
the Protection Register Program command.
I
The first bus cycle sets up the Protection
Register Program command.
I
The second latches the Address and the Data
to be written to the Protection Register and
starts the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The user-programmable segment can be locked
by programming bit 1 of the Protection Register
Lock location to ‘0’ (see Table 7. and Table 8. for
Word-wide and Byte-wide protection addressing).
Bit 0 of the Protection Register Lock location locks
the factory programmed segment and is pro-
grammed to ‘0’ in the factory. The locking of the
Protection Register is not reversible, once the lock
bits are programmed no further changes can be
made to the values stored in the Protection Regis-
ter, see Figure 6., Protection Register Memory
Map. Attempting to program a previously protect-
ed Protection Register will result in a Status Reg-
ister error.
The Protection Register Program cannot be sus-
pended.
See
APPENDIX
C.,
Figure
22., Protection Register Program Flowchart and
Pseudo Code, for the flowchart for using the Pro-
tection Register Program command.
Configure STS Command.
The Configure STS command is used to configure
the Status/(Ready/Busy) pin. After power-up or re-
set the STS pin is configured in Ready/Busy
mode. The pin can be configured in Status mode
using the Configure STS command (refer to Sta-
tus/(Ready/Busy) section for more details.
Two write cycles are required to issue the Config-
ure STS command.
I
The first bus cycle sets up the Configure STS
command.
I
The second specifies one of the four possible
configurations (refer to Table 5., Configuration
Codes):
Ready/Busy mode
Pulse on Erase complete mode
Pulse on Program complete mode
Pulse on Erase or Program complete
mode
The device will not accept the Configure STS com-
mand while the Program/Erase controller is busy
or during Program/Erase Suspend. When STS pin
is pulsing it remains Low for a typical time of
250ns. Any invalid Configuration Code will set an
error in the Status Register.



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