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SGSD100 датащи(PDF) 2 Page - STMicroelectronics

номер детали SGSD100
подробное описание детали  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
PDF  6 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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SGSD100 датащи(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Thermal Resistance Ju nction- case
Max
0.96
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collecto r Cu t-of f
Current (IE =0)
VCE =80 V
VCE =80 V
Tc = 100
oC
0. 5
1. 5
mA
mA
ICEV
Collecto r Cu t-of f
Current (VBE = -0.3V)
VCE =80 V
VCE =80 V
Tc = 100
oC
0. 1
2
mA
mA
ICEO
Collecto r Cu t-of f
Current (IB =0)
VCE =60 V
VCE =60 V
Tc = 100
oC
0. 5
1. 5
mA
mA
IEBO
Emitter Cut-off Current
(IC =0)
VEB =5 V
2
mA
VCEO(su s)
∗ Collector-Emitter
Sustaining Voltage
IC =50 mA
80
V
VCE(sat)
∗ Collector-Emitter
Satu ration Vo ltage
IC =5 A
IB =20 mA
IC =5 A
IB =20 mA
Tc = 100
oC
IC =10 A
IB =4 0 mA
IC =10 A
IB =4 0 mA
Tc =1 00
oC
IC =20 A
IB =8 0 mA
IC =20 A
IB =8 0 mA
Tc =1 00
oC
0.95
0.8
1.2
1.3
2
2.3
1. 2
1.75
3. 5
V
V
V
V
V
V
VBE(sat)
∗ Base-Emitter
Satu ration Vo ltage
IC =20 A
IB =8 0 mA
IC =20 A
IB =8 0 mA
Tc =1 00
oC
2.6
2.5
3. 3
V
V
VBE
∗
Base-Emitter Volta ge
IC =10 A
VCE =3 V
IC =10 A
VCE =3 V
Tc = 100
oC
11.8
1.6
3V
V
hFE
∗
DC Current Gain
IC =5 A
VCE =3 V
IC =5 A
VCE =3 V
Tc =1 00
oC
IC =10 A
VCE =3 V
IC =10 A
VCE =3 V
Tc = 100
oC
IC =20 A
VCE =3 V
IC =20 A
VCE =3 V
Tc = 100
oC
600
500
300
5000
8000
4000
8000
2000
2000
150 00
120 00
6000
VF
∗
Diod e Forward Voltage IF =5 A
IF =5 A
Tc =1 00
oC
IF =10 A
IF =10 A
Tc = 100
oC
IF =20 A
IF =20 A
Tc = 100
oC
1.2
0.85
1.6
1.4
2.3
1.3
V
V
V
V
V
V
Es/b
Second Breakdown
Energy
VCC = 3 0 V
L= 3mH
VCC = 3 0 V
L= 3mH
Tc =1 00
oC
250
250
mJ
mJ
Is/b
Second Breakdown
Current
VCE = 25 V t = 500 ms
6
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
SGSD100/SGSD200
2/6



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