| поискавой системы для электроныых деталей |
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SGSD100 датащи(PDF) 1 Page - STMicroelectronics |
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SGSD100 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: s GENERAL PURPOSE SWITCHING APPLICATION s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The SGSD100 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-218 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. INTERNAL SCHEMATIC DIAGRAM September 1997 1 2 3 TO-218 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN SGSD100 PNP SGSD200 VCBO Collector-Base Volta ge (IE =0) 80 V VCEO Collector-Emitte r Voltage (IB =0 ) 80 V IC Collector Current 25 A ICM Collector Peak Current 40 A IB Base Current 6 A IBM Base Peak Current 10 A Ptot Total Dissipation at Tc ≤ 25 oC 130 W Tstg Storage Temp erature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. 1/6 |
Аналогичный номер детали - SGSD100 |
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Аналогичное описание - SGSD100 |
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