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HAT2201R датащи(PDF) 3 Page - Renesas Technology Corp

номер детали HAT2201R
подробное описание детали  Silicon N Channel Power MOS FET Power Switching
PDF  8 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2201R датащи(HTML) 3 Page - Renesas Technology Corp

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HAT2201R
Rev.3.00, Apr.07.2004, page 3 of 7
Main Characteristics
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
10
1
0.1
0.01
0.001
0.1 0.3
1
3
10
30
300 1000
100
100
Ta = 25°C
1 shot Pulse
PW =
10 ms
10
µs
100
µs
Operation in
this area is
limited by RDS(on)
DC Operation
(PW
£ 10 s)Note 5
1 ms
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20
16
12
8
4
0
24
6
8
10
VGS = 5.5 V
10 V
7 V
Pulse Test
6.2 V
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
20
16
12
8
4
0
24
6
8
10
Tc = 75°C
25°C
–25°C
VDS = 10 V
Pulse Test
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
400
300
200
100
0
48
12
16
20
Pulse Test
ID = 5 A
1 A
2 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
110
100
100
50
VGS = 8 V
10 V
Pulse Test
5.8 V
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
4.0
3.0
2.0
1.0
0
50
100
150
200
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s



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