HAT2201R

Rev.3.00, Apr.07.2004, page 2 of 7

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

100

V

Gate to source voltage

±20

V

Drain current

6A

Drain peak current

Note1

48

A

Body-drain diode reverse drain current

6A

Avalanche current

Note 2

6A

Avalanche energy

Note 2

3.6

mJ

Channel dissipation

Pch

Note3

2.5

W

Channel to Ambient Thermal Impedance

50

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

≤ 10s

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

100

—

—

V

Gate to source leak current

——

± 0.1

Zero gate voltage drain current

——

1

Gate to source cutoff voltage

3.5

—

5.0

V

Static drain to source on state

—34

43

m

Ω

Note4

resistance

—35

49

m

Ω

Note4

Forward transfer admittance

10

—

S

Note4

Input capacitance

Ciss

—

1450

—

pF

Output capacitance

Coss

—

180

—

pF

Reverse transfer capacitance

Crss

—

65

—

pF

f = 1 MHz

Gate Resistance

Rg

—

0.9

—

Ω

Total gate charge

Qg

—

21

—

nC

Gate to source charge

Qgs

—

7.6

—

nC

Gate to drain charge

Qgd

—

5.2

—

nC

Turn-on delay time

—18

—

ns

Rise time

—2.5

—

ns

≅ 30 V

Turn-off delay time

—36

—

ns

Ω

Fall time

—

4.0

—

ns

Rg = 4.7

Ω

Body–drain diode forward voltage

—

0.79

1.03

V

Note4

—

40

—

ns

diF/ dt = 100 A/

µs

Notes: 4. Pulse test