IMAGE SENSOR SOLUTIONS
5
Description
The KAI-1010 series is a high resolution charge coupled
device (CCD) image sensor whose noninterlaced
architecture makes it ideally suited for video, electronic
still and motion/still camera applications. The device is
built using an advanced true two-phase, double-
polysilicon, NMOS CCD technology. The p+npn-
photodetector elements eliminate image lag and reduce
image smear while providing antiblooming protection and
electronic-exposure control. The total chip size is 10.15
(H) mm x 10.00 (V) mm. The KAI-1010 comes in
monochrome and color versions, both with microlens for
sensitivity improvement.
Device
Color
Microlens
KAI-1010
No
No
KAI-1010M
No
Yes
KAI-1011CM
Yes
Yes
Figure 2 KAI-1011CM
Architecture
The KAI-1010 consists of 1024 x 1024 photodiodes, 1024
vertical (parallel) CCD shift registers (VCCDs), and dual
1032 pixel horizontal (serial) CCD shift registers
(HCCDs) with independent output structures. The device
can be operated in either single or dual line mode. The
advanced, progressive-scan architecture of the device
allows the entire image area to be read out in a single scan.
The active pixels are arranged in a 1008 (H) x 1018 (V)
array with an additional 16 columns and 6 rows of light-
shielded dark reference pixels.
Image Acquisition
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron-hole
pairs
within
the
individual
silicon
photodiodes. These photoelectrons are collected locally by
the formation of potential wells at each photosite. Below
photodiode saturation, the number of photoelectrons
collected at each pixel is linearly dependent on light level
and exposure time and non-linearly dependent on
wavelength. When the photodiode's charge capacity is
reached, excess electrons are discharged into the substrate
to prevent blooming.
KAI-1010/1011 Rev 8 •
www.k odak.com/go/imagers 585-722- 4385 imagers@kodak.com
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