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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S2000AFI датащи(PDF) 1 Page - STMicroelectronics |
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S2000AFI датащи(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N). APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM December 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collect or-Emitt er Voltage (VBE =0) 1500 V VCEO Collect or-Emitt er Voltage (IB = 0) 700 V VEBO Emitt er-Base Voltage (IC =0) 10 V IC Collect or Current 8 A ICM Collect or Peak Current (tp <5 ms) 15 A Ptot Total Dissipation at Tc =25 oC50 W Tstg St orage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 ISOWATT218 ® 1/6 |
Аналогичный номер детали - S2000AFI |
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Аналогичное описание - S2000AFI |
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ссылки URL |
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