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STW12NK80Z датащи(PDF) 4 Page - STMicroelectronics

номер детали STW12NK80Z
подробное описание детали  N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NK80Z датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
800
V
IDSS
Peak diode recovery
voltage slope
VDS =Max rating,
VDS =Max rating,
Tc=125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VGS = 0)
VGS = ± 20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 100µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID = 5.25A
0.65
0.75
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15V, ID = 5.25A
12
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2620
250
53
pF
pF
pF
Cosseq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 640V
100
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640V, ID = 10.5A
VGS =10V
(see Figure 18)
87
14
44
nC
nC
nC
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 5.25A,
RG=4.7Ω, VGS=10V
(see Figure 19)
30
18
70
20
ns
ns
ns
ns
tr(Voff)
tf
tc
Off voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 10.5A,
RG=4.7Ω, VGS=10V
(see Figure 19)
16
15
28
ns
ns
ns



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