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STW12NK80Z датащи(PDF) 3 Page - STMicroelectronics

номер детали STW12NK80Z
подробное описание детали  N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NK80Z датащи(HTML) 3 Page - STMicroelectronics

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STB12NK80Z - STP12NK80Z - STW12NK80Z
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
800
V
VDGR
Drain-gate voltage (RGS = 20KΩ)800
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
10.5
A
ID
Drain current (continuous) at TC=100°C
6.6
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
42
A
PTOT
Total dissipation at TC = 25°C
190
W
Derating Factor
1.51
W/°C
dv/dt(2)
2.
ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
4.5
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220/
D²PAK
TO-247
Rthj-case
Thermal resistance junction-case Max
0.66
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
50
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
10.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
400
mJ



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