AT45DB021E datasheet(68/69 Pages) RENESAS

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DS-AT45DB021E-8789 Rev. N

Page 68

3/24/26

AT45DB021E Datasheet

31. Revision History

Doc. Rev.

Date

Comments

8789A

05/2012

Initial document release.

8789B

11/2012

Corrected pinout diagrams to top view.

Added Read-Modify-Write section.

For figures Program Sector Protection Register, Read Sector Protection Register Command, and

Read Sector Lockdown Register Command, changed the opcode from n +15 to n +7.

Added note at end of section, Auto Page Rewrite.

Updated figure, Exit Ultra-Deep Power-Down.

In table, Additional Commands, changed “Auto Page Rewrite through Buffer” to “Auto Page Rewrite or

Read Modify Write through Buffer”.

Power-Up Timing, increased VPOR max from 1.55 to 1.60.

tXUDPD, 1.65 V increased maximum 70 µs to 120 µs and 2.3 V maximum from 70 µs to 240 µs.

tSE, increased typical from 250 ms to 350 ms and maximum from 450 ms to 550 ms.

Increased 1.65 V and 2.3 V typical and maximum values for IDPD, ISB, ICC1, and ICC2.

Added Legacy Commands table.

Updated datasheet status to preliminary.

Updated to Adesto template.

8789C

6/2013

Updated electrical and power specifications. Removed CCUN-T package from ordering codes, (not

available with this device).

Removed references to UBGA package (not available with this device). Moved “Buffer Read” from

Group C to Group A in Operation Mode Summary. Removed reference to concurrent read capability.

Removed preliminary datasheet status.

8789D

7/2013

Updated Auto Page Rewrite cycle to 50,000 cumulative page erase/program operations. Added

reserved part order codes.Updated DC conditions for VOL.

8789E

10/2013

Corrected Low Power Read Option (up to 15 MHz).

8789F

7/2015

Expanded explanation of Power up/Power down (Section 16). Added Die in Wafer Form package

option.Corrected the Read-Modify-Write description (Section 6.10). Removed unavailable package

and pin out diagram. Corrected Tables 15-6 and 15-7. Added information on Power Up (Section 16.1).

Updated Tables 12-1 and 12-3. Updated condition description for IUDPD, IDPD, and ISB. Updated Deep

Power Down and Ultra Deep Power Down timing diagrams.

8789G

3/2016

Added WLCSP package option. Updated Condition description for IDPD, and ISB. Added footnote to

tDIS, tEUDPD, tEPD.

8789H

1/2017

Added patent information.

8789I

7/2020

Updated format and layout. Copy edited throughout (no change in technical information).

For packages ending in SHN-B and SHN-T, removed link to note in the Ordering Codes tables that

states: “Not recommended for new designs. Use the 8S1 package option.”

8789J

3/2021

Updated notes to tables 28.2, 28.3, 28.4.

Removed original note 2 from table 28.3.

8789K

02/2022

Changed company logo to Renesas.

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