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AT45DB021E датащи(PDF) 35 Page - Renesas Technology Corp

номер детали AT45DB021E
подробное описание детали  2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory
PDF  69 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB021E датащи(HTML) 35 Page - Renesas Technology Corp

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DS-AT45DB021E-8789 Rev. N
Page 35
3/24/26
© 2012-2026 Renesas Electronics
AT45DB021E Datasheet
Figure 18. Ultra-Deep Power-Down
12.2.1
Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, the CS pin must simply be pulsed by asserting the CS pin, waiting
the minimum necessary tCSLU time, and then deasserting the CS pin again. To facilitate simple software
development, a dummy byte opcode can also be entered while the CS pin is being pulsed; the dummy byte
opcode is simply ignored by the device in this case. After the CS pin has been deasserted, the device exits from
the Ultra-Deep Power-Down mode and return to the standby mode within a maximum time of tXUDPD. If the CS pin
is reasserted before the tXUDPD time has elapsed in an attempt to start a new operation, then that operation is
ignored and nothing is performed. The system must wait for the device to return to the standby mode before
normal command operations such as Continuous Array Read can be resumed.
Since the contents of the Buffer cannot be maintained while in the Ultra-Deep Power-Down mode, the Buffer
contains undefined data when the device returns to the standby mode.
Figure 19. Exit Ultra-Deep Power-Down
SCK
CS
SI
SO
MSB
ICC
23
1
0
0
67
5
4
Opcode
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
t
EUDPD
1111001
CS
SO
ICC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tXUDPD
tCSLU



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