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2N2484 датащи(PDF) 12 Page - STMicroelectronics

номер детали 2N2484
подробное описание детали  SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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2N2484 датащи(HTML) 12 Page - STMicroelectronics

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MIL-PRF-19500/376E
12
TABLE I. Group A inspection.
MIL-STD-750
Limit
Inspection 1/
Method
Conditions
Symbol
Min
Max
Unit
Subgroup 1 2/
Visual and mechanical
examination 3/
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents 3/ 4/ 5/
1022
n = 15 devices, c = 0
Temperature cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition TA = +250
°C at
t = 24 hrs or TA = 300
°C at
t = 2 hrs; n = 11 wires, c = 0
Subgroup 2
Collector to emitter breakdown
voltage
3011
Bias condition D; IC = 10 mA dc
pulsed (see 4.5.1)
V(BR)CEO
60
V dc
Collector to base cutoff current
3036
Bias condition D; VCB = 60 V dc
ICBO1
10
µA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 6 V dc
IEBO1
10
µA dc
Collector to base cutoff current
3036
Bias condition D; VCB = 45 V dc
ICBO2
5
nA dc
Collector to emitter cutoff
current
3041
Bias condition D; VCE = 5 V dc
ICEO
2
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 5 V dc
IEBO2
2
nA dc
Collector to emitter cutoff
current
3041
Bias condition C; VCE = 45 V dc
ICES
5
nA dc
Forward-current transfer ratio
3076
VCE = 5 V dc; IC = 1
µA dc
hFE1
45
See footnote at end of table.



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