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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F103ZC датащи(PDF) 86 Page - STMicroelectronics |
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STM32F103ZC датащи(HTML) 86 Page - STMicroelectronics |
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86 / 118 page  Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 86/118 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 40 and Table 46, respectively. Unless otherwise specified, the parameters given in Table 46 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. Table 46. I/O AC characteristics(1) 1. The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a description of GPIO Port configuration register. MODEx[1:0] bit value(1) Symbol Parameter Conditions Min Max Unit 10 fmax(IO)out Maximum frequency (2) 2. The maximum frequency is defined in Figure 40. CL = 50 pF, VDD = 2 V to 3.6 V 2 MHz tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V 125(3) 3. Values based on design simulation and validated on silicon, not tested in production. ns tr(IO)out Output low to high level rise time 125(3) 01 fmax(IO)out Maximum frequency (2) C L = 50 pF, VDD = 2 V to 3.6 V 10 MHz tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V 25(3) ns tr(IO)out Output low to high level rise time 25(3) 11 Fmax(IO)out Maximum frequency (2) CL = 30 pF, VDD = 2.7 V to 3.6 V 50 MHz CL = 50 pF, VDD = 2.7 V to 3.6 V 30 MHz CL = 50 pF, VDD = 2 V to 2.7 V 20 MHz tf(IO)out Output high to low level fall time CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3) ns CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3) CL = 50 pF, VDD = 2 V to 2.7 V 12(3) tr(IO)out Output low to high level rise time CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3) CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3) CL = 50 pF, VDD = 2 V to 2.7 V 12(3) -tEXTIpw Pulse width of external signals detected by the EXTI controller 10 ns |
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