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M48T35AV-10PC1 датащи(PDF) 13 Page - STMicroelectronics

номер детали M48T35AV-10PC1
подробное описание детали  256 Kbit 32Kb x8 TIMEKEEPER SRAM
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T35AV-10PC1 датащи(HTML) 13 Page - STMicroelectronics

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M48T35AY, M48T35AV
Figure 11. Crystal Accuracy Across Temperature
AI02124
-80
-60
-100
-40
-20
0
20
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
∆F
= -0.038
(T - T
0)
2
± 10%
F
ppm
C
2
T
0 = 25 °C
ppm
°C
Figure 12. Supply Voltage Protection
AI02169
VCC
0.1
µF
DEVICE
VCC
VSS
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
ICC transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass ca-
pacitor value of 0.1µF (as shown in Figure 12) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below VSS by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from VCC to VSS (cathode
connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.



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