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MSC8103 датащи(PDF) 43 Page - Freescale Semiconductor, Inc |
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MSC8103 датащи(HTML) 43 Page - Freescale Semiconductor, Inc |
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43 / 104 page ![]() DC Electrical Characteristics MSC8103 Network Digital Signal Processor, Rev. 11 Freescale Semiconductor 2-3 2.4 DC Electrical Characteristics This section describes the DC electrical characteristics for the MSC8103. The measurements in Table 2-4 assume the following system conditions: •TJ = 0 – 100 °C • VDD = 1.6 V ± 5% VDC • VDDH = 3.3 V ± 5% VDC • GND = 0 VDC Note: The leakage current is measured for nominal VDDH and VDD or both VDDH and VDD must vary in the same direction (for example, both VDDH and VDD vary by ± 5 percent). Table 2-4. DC Electrical Characteristics Characteristic Symbol Min Max Unit Input high voltage1, all inputs except CLKIN VIH 2.0 3.465 V Input low voltage1 VIL GND 0.8 V CLKIN input high voltage VIHC 2.5 3.465 V CLKIN input low voltage2 VILC GND 0.8 V Input leakage current, VIN = VDDH IIN —10 µA Tri-state (high impedance off state) leakage current, VIN = VDDH IOZ —10 µA Signal low input current3, VIL = 0.4 V IL — –4.0 mA Signal high input current3, VIH = 2.0 V IH —4.0 mA Output high voltage, IOH = –2 mA, except open drain pins VOH 2.4 — V Output low voltage, IOL= 3.2 mA VOL —0.4 V Notes: 1. See Figure 2-1 for undershoot and overshoot voltages. 2. The optimum CLKIN duty cycle is obtained when: VILC = VDDH – VIHC. 3. Not tested. Guaranteed by design. Figure 2-1. Overshoot/Undershoot Voltage for VIH and VIL Table 2-5. Typical Power Dissipation Characteristic Symbol Typical Unit Core power dissipation at 300 MHz PCORE 450 mW CPM power dissipation at 200 MHz PCPM 320 mW SIU power dissipation at 100 MHz PSIU 80 mW Core leakage power PLCO 3mW CPM leakage power PLCP 6mW SIU leakage power PLSI 2mW GND GND – 0.3 V GND – 0.7 V VIL VIH Must not exceed 10% of clock period VDDH + 20% VDDH + 10% VDDH |
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