APD03N60AI

600V N-Channel Depletion Mode MOSFET

APD03N60AI RVE1.0

臺灣永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Notes:

1

、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2

、 Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

Symbol

Parameter

Test Condition

Min.

Typ. Max. Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= -5V, ID

=250μA

600

-

-

V

ID(off)

Off-state Drain to Source Current

VDS=600V, VGS= -5V,TJ=25°C

-

-

0.1

μA

VDS=480V, VGS=-5V,TJ=125°C

-

-

10

μA

IGSS

Gate to Source Leakage Current

VDS =0V, VGS = ±20V

-

-

±100

nA

IDSS

On-state drain current

VGS=0V, VDS=25V

12

-

-

mA

VGS(th)

Gate Threshold Voltage

VDS=3V, ID

=8μA

-2.7

-1.8

-1.0

V

RDS(on)

Static Drain-Source on-Resistance

note2

VGS=0V, ID=3mA

-

350

700

Ω

VGS=10V, ID=16mA

-

400

800

Ciss

Input Capacitance

VDS =25V, VGS =-5V,

f = 1.0MHz

-

50

-

pF

Coss

Output Capacitance

-

4.53

-

pF

Crss

Reverse Transfer Capacitance

-

1.08

-

pF

Qg

Total Gate Charge

VDS =400V, ID =0.01A,

VGS =-5V to 5V

-

1.14

-

nC

Qgs

Gate-Source Charge

-

0.5

-

nC

Qgd

Gate-

Drain(“Miller”) Charge

-

0.37

-

nC

td(on)

Turn-on Delay Time

VDS=300V,

ID=0.01A, RGEN

=6Ω,

VGS =-5V to 7V

-

9.9

-

ns

tr

Turn-on Rise Time

-

55.8

-

ns

td(off)

Turn-off Delay Time

-

56.4

-

ns

tf

Turn-off Fall Time

-

136

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

0.03

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

0.12

A

VSD

Diode Forward Voltage

IF=16mA, VGS=-5V

-

-

1.2

V

trr

Reverse Recovery Time

VGS =-5V, IF=0.01A,

di/dt=100A/μs

-

243

-

ns

Qrr

Reverse Recovery Charge

-

636

-

nC