FDMA1023PZ Rev.C4

www.fairchildsemi.com

2

Electrical Characteristics T

J = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = –250 A, VGS = 0V

–20

V

BVDSS

TJ

Breakdown Voltage Temperature

Coefficient

ID = –250 A, referenced to 25°C

–11

mV

/°C

IDSS

Zero Gate Voltage Drain Current

VDS = –16V, VGS = 0V

–1

A

IGSS

Gate to Source Leakage Current

VGS = ±8V, VDS = 0V

±10

A

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = –250 A

–0.4

–0.7

–1.0

V

VGS(th)

TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = –250 A, referenced to 25°C

2.5

mV/°C

rDS(on)

Static Drain to Source On-Resistance

VGS = –4.5V, ID = –3.7A

60

72

m

VGS = –2.5V, ID = –3.2A

75

95

VGS = –1.8V, ID = –2.0A

100

130

VGS = –1.5V, ID = –1.0A

130

195

VGS = –4.5V, ID = –3.7A,TJ =125°C

81

91

gFS

Forward Transconductance

VDS = –5V, ID = –3.7A

12

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = –10V, VGS = 0V,

f = 1MHz

490

655

pF

Coss

Output Capacitance

100

135

pF

Crss

Reverse Transfer Capacitance

90

135

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = –10V, ID = –1A

VGS = –4.5V, RGEN = 6

918

ns

tr

Rise Time

12

22

ns

td(off)

Turn-Off Delay Time

64

103

ns

tf

Fall Time

37

60

ns

Qg(TOT)

Total Gate Charge

VDD = –10V, ID = –3.7A

VGS = –4.5V

8.6

12

nC

Qgs

Gate to Source Gate Charge

0.7

nC

Qgd

Gate to Drain “Miller” Charge

2.0

nC

Drain-Source Diode Characteristics

IS

Maximum Continuous Source-Drain Diode Forward Current

–1.1

A

VSD

Source to Drain Diode Forward Voltage

VGS = 0V, IS = –1.1A

(Note 2)

–0.8

–1.2

V

trr

Reverse Recovery Time

IF = –3.7A, di/dt = 100A/ s

32

48

ns

Qrr

Reverse Recovery Charge

15

23

nC