VS-10TTS08SPbF Series

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Vishay Semiconductors

Revision: 08-Jul-15

3

Document Number: 94562

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Note

(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W



For recommended footprint and soldering techniques refer to application note #AN-994

Fig. 1 - Current Rating Characteristics

Fig. 2 - Current Rating Characteristics

Fig. 3 - On-State Power Loss Characteristics

Fig. 4 - On-State Power Loss Characteristics

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage



temperature range

TJ, TStg

-40 to +125

°C

Soldering temperature

TS

For 10 s (1.6 mm from case)

260

Maximum thermal resistance,



junction to case

RthJC

DC operation

1.5

°C/W

Typical thermal resistance,



junction to ambient (PCB mount)

RthJA (1)

40

Approximate weight

2g

0.07

oz.

Marking device

Case style D2PAK (SMD-220)

10TTS08S

105

110

115

120

125

0

1

23

45

67

30°

60°

90°

120°

180°

Conduction Angle

Average On-state Current (A)

10TTS08

R

(DC) = 1.5 K/W

thJC

105

110

115

120

125

02468

10

12

DC

30°

60°

90°

120°

180°

Average On-state Current (A)

Conduction Period

10TTS08

R

(DC) = 1.5 K/W

thJC

0

1

2

3

4

5

6

7

8

01234

5

67

RMS Limit

Conduction Angle

Average On-state Current (A)

180°

120°

90°

60°

30°

10TTS08

T = 125°C

J

0

2

4

6

8

10

12

02

46

8

10

12

DC

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Average On-state Current (A)

10TTS08

T = 125°C

J