VS-10TTS08SPbF Series

www.vishay.com

Vishay Semiconductors

Revision: 08-Jul-15

1

Document Number: 94562

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Thyristor High Voltage Surface Mount Phase Control SCR, 10 A

FEATURES

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 260 °C

• Designed

and

qualified

according

JEDEC®-JESD 47

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Input rectification (soft start)

• Vishay input diodes, switches and output rectifiers which

are available in identical package outlines

DESCRIPTION

The VS-10TTS08SPbF high voltage series of silicon

controlled rectifiers are specifically designed for medium

power switching and phase control applications. The glass

passivation technology used has reliable operation up to

125 °C junction temperature.

Note

•TA = 55 °C, TJ = 125 °C, footprint 300 mm2

PRODUCT SUMMARY

Package

TO-263AB (D2PAK)

Diode variation

Single SCR

IT(AV)

6.5 A

VDRM/VRRM

800 V

VTM

< 1.15 V

IGT

15 mA

TJ

-40 to +125 °C

3

Gate

2, 4

Anode

1

Cathode

1

2

4

3

TO-263AB (D2PAK)

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

NEMA FR-4 or G-10 glass fabric-based epoxy

with 4 oz. (140 μm) copper

2.5

3.5

A

Aluminum IMS, RthCA = 15 °C/W

6.3

9.5

Aluminum IMS with heatsink, RthCA = 5 °C/W

14.0

18.5

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

IT(AV)

Sinusoidal waveform

6.5

A

IRMS

10

VRRM/VDRM

800

V

ITSM

110

A

VT

6.5 A, TJ = 25 °C

1.15

V

dV/dt

150

V/μs

dI/dt

100

A/μs

TJ

Range

-40 to +125

°C

VOLTAGE RATINGS

PART NUMBER

VRRM, MAXIMUM

PEAK REVERSE VOLTAGE

V

VDRM, MAXIMUM PEAK

DIRECT VOLTAGE

V

IRRM/IDRM

AT 125 °C

mA

VS-10TTS08SPbF

800

800

1.0