AP12P10D

-100V P-Channel Enhancement Mode MOSFET

AP12P10D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ =25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

-100

-

-

V

lGSS

Gate-Source Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS = -100V, VGS = 0V

-

-

-1

μA

IDSS TJ=100°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-1.3

-1.85

-2.3

V

RDS(on)

Drain-Source on-Resistance4

VGS = -10V, ID = -3A

-

180

220

mΩ

RDS(on)

VGS = -4.5V, ID = -2A

-

200

250

Ciss

Input Capacitance

VDS = -50V, VGS =0V,

f =1MHz

-

1270

-

pF

Coss

Output Capacitance

-

36

-

Crss

Reverse Transfer Capacitance

-

30

-

Rg

Gate Resistance

f =1MHz

-

12.5

-

Ω

Qg

Total Gate Charge

VGS = -10V,

VDS = -50V, ID= -3A

-

25

-

nC

Qgs

Gate-Source Charge

-

4.4

-

Qgd

Gate-Drain Charge

-

4.6

-

td(on)

Turn-on Delay Time

VGS =-10V, VDD= -50V, RG =

3 Ω, ID= -3A

-

15

-

ns

tr

Rise Time

-

17

-

td(off)

Turn-off Delay Time

-

45

-

tf

Fall Time

-

16

-

IS

Continuous Source Current TA=25°C

-

-

-

-12

A

VSD

Diode Forward Voltage4

IS = -3A, VGS = 0V

-

-

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =-72V,VGS =-10V,L=0.1mH,IAS =-8A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.