AP12P10D datasheet(1/7 Pages) APME

номер детали	AP12P10D

подробное описание детали	-100V P-Channel Enhancement Mode MOSFET

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AP12P10D

-100V P-Channel Enhancement Mode MOSFET

AP12P10D REV1.0

永源微電子科技有限公司

Description

The AP12P10D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -100V ID =-12A

RDS(ON) <220mΩ @ VGS=10V (Type：180mΩ)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP12P10D

TO-252-3L

AP12P10D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-12

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-6.7

A

IDM

Pulsed Drain Current2

-36

A

EAS

Single Pulse Avalanche Energy3

105

mJ

IAS

Avalanche Current

-12

A

PD@TC=25℃

Total Power Dissipation4

3.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃/W

RθJC

Thermal Resistance from Junction-to-Case

3.7

°C/W

Аналогичный номер детали - AP12P10D

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP12P04D	1Mb / 7P	-40V P-Channel Enhancement Mode MOSFET
	AP12P04S	1Mb / 7P	-40V P-Channel Enhancement Mode MOSFET
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Аналогичное описание - AP12P10D

производитель	номер детали	датащи	подробное описание детали
Diodes Incorporated	ZXMP10A17G	642Kb / 8P	100V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
	ZXMP10A17K	683Kb / 8P	100V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
	ZXMP10A18G	549Kb / 8P	100V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 3
Cystech Electonics Corp...	MTE300P10KN3	471Kb / 9P	100V P-Channel Enhancement Mode MOSFET
Diodes Incorporated	DMP10H4D2S	538Kb / 6P	100V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
	ZXMP10A17GQ	216Kb / 6P	100V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 1
	DMP10H4D2S	538Kb / 6P	100V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 3
Shenzhen Huazhimei Semi...	HM3P10MR	1Mb / 5P	100V P-Channel Enhancement Mode MOSFET
Shanghai Leiditech Elec...	FDMS86163P	2Mb / 5P	-100V P-Channel Enhancement Mode MOSFET Rev : 01.09.2021
Shanghai Leiditech Elec...	FQD8P10TM_F085	1Mb / 5P	-100V P-Channel Enhancement Mode MOSFET Rev : 01.0 8 .2021

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Аналогичный номер детали - AP12P10D

Аналогичное описание - AP12P10D

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