臺灣永源微電子科技有限公司

Electrical Characteristics at Tj=25 ℃ unless otherwise specified

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

BVDSS

Drain-source breakdown voltage

VGS=0 V, ID=250 μA

100

V

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 μA

1.2

2.0

2.5

V

RDS(ON)

Drain-source on-state resistance

VGS=10 V, ID=5 A

110

140

mΩ

RDS(ON)

Drain-source on-state resistance

VGS=4.5 V, ID=3 A

160

180

mΩ

IGSS

Gate-source leakage current

VGS=20 V

100

nA

VGS=-20 V

-100

IDSS

Drain-source leakage current

VDS=100 V, VGS=0 V

1

uA

Ciss

Input capacitance

VGS=0 V,

VDS=50 V,

ƒ=100 kHz

206.1

pF

Coss

Output capacitance

28.9

pF

Crss

Reverse transfer capacitance

1.4

pF

td(on)

Turn-on delay time

VGS=10 V,

VDS=50 V,

RG=2 Ω,

ID=5 A

14.7

ns

tr

Rise time

3.5

ns

td(off)

Turn-off delay time

20.9

ns

tf

Fall time

2.7

ns

Qg

Total gate charge

ID=5 A,

VDS=50 V,

VGS=10 V

4.3

nC

Qgs

Gate-source charge

1.5

nC

Qgd

Gate-drain charge

1.1

nC

Vplateau

Gate plateau voltage

5.0

V

IS

Diode forward current

VGS<Vth

7

A

ISP

Pulsed source current

21

VSD

Diode forward voltage

IS=7 A, VGS=0 V

1.0

V

trr

Reverse recovery time

IS=5 A, di/dt=100

A/μs

32.1

ns

Qrr

Reverse recovery charge

39.4

nC

Irrm

Peak reverse recovery current

2.1

A

Note

1)

Calculated continuous current based on maximum allowable junction temperature.

2)

Repetitive rating; pulse width limited by max. junction temperature.

3)

Pd is based on max. junction temperature, using junction-case thermal resistance.

4)

The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still

air environment with Ta=25 °C.

5)

VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 °C.

AP5N10DF

100V N-Channel Enhancement Mode MOSFET

AP5N10DF Rve3.8