AP5N10DF

100V N-Channel Enhancement Mode MOSFET

AP5N10DF Rve3.8

臺灣永源微電子科技有限公司

Description

The AP5N10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 100V ID = 5A

RDS(ON) < 140mΩ @ VGS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5N10DF

AP5N10DF

5000

Absolute Maximum Ratings at Tj=25℃ unless otherwise noted

Parameter

Symbol

Value

Unit

Drain source voltage

VDS

100

V

Gate source voltage

VGS

±20

V

Continuous drain current1), TC=25 ℃

ID

5

A

Pulsed drain current2), TC=25 ℃

ID, pulse

15

A

Power dissipation3), TC=25 ℃

PD

17

W

Single pulsed avalanche energy5)

EAS

1.2

mJ

Operation and storage temperature

Tstg，Tj

-55 to 150

℃

Thermal resistance, junction-case

RθJC

7.4

℃/W

Thermal resistance, junction-ambient4)

RθJA

62

℃/W

P

DFN3*3-8L