AP3N120MP

1200V N-Channel Enhancement Mode MOSFET

AP3N120MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 μA

1200 1350

V

ΔBVDSS/ ΔTJ Breakdown Voltage TemperatureCoefficient

ID=250μA, Referenced to25°C

0.74

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS =1200V, VGS=0V

1

μA

IDSS

Zero Gate Voltage Drain Current

VDS=720V, TC=125°C

10

μA

IGSSF

Gate-Body Leakage Current, Forward

VGS=30V, VDS=0V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS=-30V, VDS=0V

-100

nA

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID=250uA

3.0

3.5

5.0

V

RDS(On)

Drain-Source On-state Resistance

VGS=10 V, ID=4.5A,

7500 8500

mΩ

Ciss

Input Capacitance

VDS=25V, VGS=0V, f=1.0MHz

650

pF

Coss

Output Capacitance

65

pF

Crss

Reverse Transfer Capacitance

10

pF

td(on)

Turn On Delay Time

VDD=600V, ID=3A,

RG=25Ω

40

ns

tr

Rising Time

10

ns

td(off)

Turn Off Delay Time

75

ns

tf

Fall Time

50

ns

Qg

Total Gate Charge

VDS=960V, ID=3A,

VGS=10V

27.5

nC

Qgs

Gate-Source Charge

3

nC

Qgd

Gate-Drain Charge

15.5

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

3

A

VSD

Diode Forward Voltage

VGS=0V, IS =1.5A

1.4

V

trr

Reverse Recovery Time

VGS=0V, IS=3A, dIF/dt=100A/μs

Note4)

1200

ns

Qrr

Reverse Recovery Charge

5.2

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=10mH IAS=3.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.