AP3N120MP

1200V N-Channel Enhancement Mode MOSFET

AP3N120MP RVE1.0

永源微電子科技有限公司

Description

The AP3N120MP is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

.

General Features

VDS = 1200V ID =3.0A

RDS(ON) < 8500mΩ @ VGS=10V （Type：7500mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3N120MP

TO-247-3L

AP3N120MP XXX YYYY

330

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Units

VDSS

Drain-Source Voltage

1200

V

VGS

Gate-Source Voltage

±30

V

ID@TC=25

℃

Drain Current, VGS @ 10V

3.0

A

ID@TC=100

℃

Drain Current, VGS @ 10V

1.8

A

IDM

Drain Current - Pulsed

12

A

EAS

Single Pulsed Avalanche Energy

64.8

mJ

IAR

Avalanche Current

3.6

A

EAR

Repetitive Avalanche Energy

0.26

mJ

PD

Power Dissipation

96

W

Tj ,Tstg

Operating and Storage Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction-to-Case

1.3

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W