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M58PR512LE датащи(PDF) 69 Page - Numonyx B.V

номер детали M58PR512LE
подробное описание детали  512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  123 Pages
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производитель  NUMONYX [Numonyx B.V]
домашняя страница  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58PR512LE датащи(HTML) 69 Page - Numonyx B.V

Back Button M58PR512LE Datasheet HTML 65Page - Numonyx B.V M58PR512LE Datasheet HTML 66Page - Numonyx B.V M58PR512LE Datasheet HTML 67Page - Numonyx B.V M58PR512LE Datasheet HTML 68Page - Numonyx B.V M58PR512LE Datasheet HTML 69Page - Numonyx B.V M58PR512LE Datasheet HTML 70Page - Numonyx B.V M58PR512LE Datasheet HTML 71Page - Numonyx B.V M58PR512LE Datasheet HTML 72Page - Numonyx B.V M58PR512LE Datasheet HTML 73Page - Numonyx B.V Next Button
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 69 / 123 page
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M58PR512LE, M58PR001LE
Program and erase times and endurance cycles
69/123
Erase
EFA block (4 KWord)
0.7
2.5
s
Main array block (128 KWord)
0.9
4
s
Program(3)
Single cell(4)
Word Program(5)
50
230
µs
Single word(4)
Word Program(5)
50
230
µs
Buffer Enhanced
Factory
Program(4)
4.2
µs
Buffer (512
words)
Buffer Program
2.15
4.3
ms
Buffer Enhanced
Factory Program
2.15
ms
Main block
(128 KWords)
Buffer Program
0.55
1.1
s
Buffer Enhanced
Factory Program
0.55
s
EFA block (4 KWords)
0.2
0.94
s
Program/Erase
cycles (per block)
Main array block (128 KWords)
100 000
cycles
EFA block (4 KWords)
100 000
Blank Check
Main array block
3.2
ms
1.
TA = –30 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 2 V.
2.
Values are liable to change with the external system-level overhead (command sequence and status
register polling execution).
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.
5.
The first Word Program in a program region will take 115 µs, the subsequent words will take 50 µs to
program.
Table 22.
Program/erase times and endurance cycles(1) (2) (continued)
Parameter
Condition
Min
Typ
Typical after
100 kW/E
cycles
Max
Unit



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