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PDTC143 датащи(PDF) 5 Page - Nexperia B.V. All rights reserved

номер детали PDTC143
подробное описание детали  50 V, 100 mA NPN resistor-equipped transistors
PDF  18 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PDTC143 датащи(HTML) 5 Page - Nexperia B.V. All rights reserved

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Nexperia
PDTC143/114/124/144EQB-Q series
50 V, 100 mA NPN resistor-equipped transistors
10. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)CBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
50
-
-
V
V(BR)CEO
collector-emitter
breakdown voltage
IC = 2 mA; IB = 0 A
50
-
-
V
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
VCE = 30 V; IB = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0 A; Tj = 150 °C
-
-
5
µA
emitter-base cut-off current
PDTC143EQB-Q
-
-
900
µA
PDTC114EQB-Q
-
-
400
µA
PDTC124EQB-Q
-
-
180
µA
IEBO
PDTC144EQB-Q
VEB = 5 V; IC = 0 A
90
µA
DC current gain
PDTC143EQB-Q
VCE = 5 V; IC = 10 mA
30
-
-
PDTC114EQB-Q
30
-
-
PDTC124EQB-Q
60
-
-
hFE
PDTC144EQB-Q
VCE = 5 V; IC = 5 mA
80
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
100
mV
off-state input voltage
PDTC143EQB-Q
-
1.1
0.5
V
PDTC114EQB-Q
-
1.1
0.8
V
PDTC124EQB-Q
-
1.1
0.8
V
VI(off)
PDTC144EQB-Q
VCE = 5 V ; IC = 100 µA
-
1.2
0.8
V
on-state input voltage
PDTC143EQB-Q
VCE = 0.3 V ; IC = 20 mA
2.5
1.9
-
V
PDTC114EQB-Q
VCE = 0.3 V ; IC = 10 mA
2.5
1.8
-
V
PDTC124EQB-Q
VCE = 0.3 V ; IC = 5 mA
2.5
1.7
-
V
VI(on)
PDTC144EQB-Q
VCE = 0.3 V ; IC = 2 mA
3.0
1.6
-
V
bias resistor 1 (input)
PDTC143EQB-Q
3.3
4.7
6.1
kΩ
PDTC114EQB-Q
7
10
13
kΩ
PDTC124EQB-Q
15.4
22
28.6
kΩ
R1
PDTC144EQB-Q
33
47
61
kΩ
R2/R1
bias resistor ratio
[1]
0.8
1
1.2
fT
transition frequency
VCE = 5 V; IC = 10 mA; f = 100 MHz
[2] -
230
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
-
-
2.5
pF
[1] See "Section 11: Test information" for resistor calculation and test conditions
[2] Characteristics of built-in transistor
PDTC143_114_124_144EQB-Q_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2021. All rights reserved
Product data sheet
Rev. 1 — 1 October 2021
5 / 18



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