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AT25DF011 датащи(PDF) 40 Page - Renesas Technology Corp

номер детали AT25DF011
подробное описание детали  1-Mbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-Read Support
PDF  50 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DF011 датащи(HTML) 40 Page - Renesas Technology Corp

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DS-AT25DF011-032 Rev. J
Page 40
2023-11-14
© 2023 Renesas Electronics
AT25DF011 Datasheet
1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
3. Program and Erase operations at -40 °C to -10 °C require a minimum of 1.7 V.
1. Maximum values indicate worst-case performance after 20,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
13.7 Program and Erase Characteristics for -40 °C to +85 °C
Symbol
Parameter
1.65 V - 3.6 V 3
2.3 V - 3.6 V
Min
Typ
Max
Min
Typ
Max
Units
tPP 1
Page Program Time
256 Bytes
1.5
3.5
1.5
3.5
ms
tBP
Byte Program Time
12
8
µs
tPE
Page Erase Time
256 Bytes
6
25
6
25
ms
tBLKE 1
Block Erase Time
4 kBytes
50
75
50
60
ms
32 kBytes
350
600
300
400
tCHPE 1,2
Chip Erase Time
1400
2300
1200
1600
ms
tOTPP 1
OTP Security Register Program Time
400
950
400
950
µs
tWRSR 2
Write Status Register Time
20
40
20
40
ms
13.8 Program and Erase Characteristics for -40 °C to +125 °C
Symbol
Parameter
1.7 V - 3.6 V
2.3 V - 3.6 V
Min
Typ
Max
Min
Typ
Max
Units
tPP 1
Page Program Time
256 Bytes
1.8
7
1.8
5
ms
tBP
Byte Program Time
12
12
µs
tPE
Page Erase Time
256 Bytes
8
25
7
25
ms
tBLKE 1
Block Erase Time
4 kBytes
50
120
50
120
ms
32 kBytes
360
900
300
700
tCHPE 1,2
Chip Erase Time
1400
3600
1200
2500
ms
tOTPP 1
OTP Security Register Program Time
400
950
400
950
µs
tWRSR 2
Write Status Register Time
20
40
20
40
ms



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