Nexperia

PESD4USB3B-TTS

ESD protection for high-speed interfaces

8. Characteristics

Table 5. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

II = 1 mA; Tamb = 25 °C

6

9

-

V

IPP = 5 A; positive transient;

Tamb = 25 °C

[1]

-

5.5

-

V

VCL

clamping voltage

IPP = -5 A; negative transient;

Tamb = 25 °C

[1]

-

-5.5

-

V

IRM

reverse leakage current per channel; VRWM = 3.3 V;

Tamb = 25 °C

-

1

100

nA

Rdyn

dynamic resistance

IR = 10 A; Tamb = 25 °C

[1]

-

0.5

-

Ω

Cd

diode capacitance

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

0.24

0.3

pF

[1] According to IEC 61000-4-5 (8/20 µs current waveform).

VI (V)

-5

5

3

-1

1

-3

aaa-033237

0.1

0.2

0.3

C

(pF)

0

Fig. 3. Capacitance as a function of input voltage;

typical values

Tj (°C)

0

200

150

50

100

001aaa193

0.4

0.8

1.2

PPP

0

PPP(25°C)

Fig. 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

aaa-033238

IPP (A)

0

30

20

10

15

5

25

35

VCL

(V)

-5

Transmission Line Pulse (TLP);

tp = 100 ns; tr = 1 ns

Fig. 5. Dynamic resistance with positive clamping;

typical values

aaa-033239

IPP (A)

-30

0

-10

-20

-15

-25

-5

5

VCL

(V)

-35

Transmission Line Pulse (TLP);

tp = 100 ns; tr = 1 ns

Fig. 6. Dynamic resistance with negative clamping;

typical values

PESD4USB3B-TTS

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

15 March 2021

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