Nexperia

PESD4USB3B-TTS

ESD protection for high-speed interfaces

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRWM

reverse standoff voltage Tamb = 25 °C

-

3.3

V

IPPM

rated peak pulse current tp = 8/20 µs

[1]

-

7

A

IEC 61000-4-2, level 4; contact discharge [2] [3]

-

15

kV

ISO 10605; contact discharge; R = 330 Ω;

C = 150 pF

[2] [3]

-

15

kV

VESD

electrostatic discharge

voltage

ISO 10605; contact discharge; R = 330 Ω;

C = 330 pF

[2] [3]

-

13

kV

Tstg

storage temperature

-65

150

°C

Tamb

ambient temperature

-55

150

°C

Tj

junction temperature

-

150

°C

[1] According to IEC 61000-4-5 (8/20 μs current waveform).

[2] All pins to ground.

[3] Device stressed with ten non-repetitive ESD pulses.

t (µs)

0

40

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

PESD4USB3B-TTS

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Product data sheet

15 March 2021

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