 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
STP25N018M9 датащи(PDF) 4 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP25N018M9 датащи(HTML) 4 Page - STMicroelectronics |
|
|
4 / 12 page  Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD(1) Source-drain current - 56 A ISDM(2) Source-drain current (pulsed) - 375 A VSD(3) Forward on voltage ISD = 55 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 55 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 151 ns Qrr Reverse recovery charge - 0.9 µC IRRM Reverse recovery current - 12 A trr Reverse recovery time ISD = 55 A, di/dt = 100 A/µs, VDD = 100 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 213 ns Qrr Reverse recovery charge - 1.9 µC IRRM Reverse recovery current - 17.5 A 1. Limited by package. 2. Pulse width is limited by safe operating area. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. STP25N018M9 Electrical characteristics DS14761 - Rev 2 page 4/12 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
