Features

Order code

VDS

RDS(on) max.

ID

STP25N018M9

250 V

18 mΩ

56 A

•

Very low FOM (RDS(on)·Qg)

•

Higher dv/dt capability

•

Excellent switching performance

•

Easy to drive

•

100% avalanche tested

Application

•

AC-DC converters

•

DC-DC converters

•

Microinverter

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values, among

all silicon based fast switching super-junction Power MOSFETs, making it particularly

suitable for applications that require superior power density and outstanding

efficiency.

1

2

3

TO-220

TAB

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

Product status link

STP25N018M9

Product summary

Order code

STP25N018M9

Marking

25N018M9

Package

TO

‑220

Packing

Tube

N-channel 250 V, 15 mΩ typ., 56 A MDmesh M9 Power MOSFET

in a TO

‑220 package

STP25N018M9

Datasheet

DS14761 - Rev 2 - January 2025

For further information, contact your local STMicroelectronics sales office.

www.st.com