FPD1000AS datasheet(2/11 Pages) FILTRONIC

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Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

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Email: sales@filcs.com

Website: www.filtronic.com

Datasheet v3.0

FPD1000AS

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

TEST CONDITIONS

ABSOLUTE MAXIMUM

Drain-Source Voltage

VDS

-3V < VGS < -0.5V

12V

Gate-Source Voltage

VGS

0V < VDS < +8V

-3V

Drain-Source Current

IDS

For VDS > 2V

IDSS

Gate Current

Forward or reverse current

+20/-20mA

RF Input Power

Under any acceptable bias state

27.5dBm

Channel Operating Temperature

TCH

Under any acceptable bias state

175°C

Storage Temperature

TSTG

Non-Operating Storage

-40°C to 150°C

Total Power Dissipation

PTOT

See De-Rating Note below

Notes:

Ambient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause

permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously

2Max. RF Input Limit must be further limited if input VSWR > 2.5:1

3Total Power Dissipation defined as: P

TOT ≡ (PDC + PIN) – POUT,

where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power

Total Power Dissipation to be de-rated as follows above 22

°C:

PTOT= 6 - (0.04W/°C) x TPACK

where TPACK= source tab lead temperature above 22°C

(coefficient of de-rating formula is the Thermal Conductivity)

Example: For a 55

°C carrier temperature: P

TOT = 6W – (0.04 x (55 – 22)) = 4.68W

5For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central

metallized ground pad on the bottom of the package

6Thermal Resistivity: The nominal value of 25

°C/W is measured with the package mounted on a large heatsink

with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the

Source leads.

7 Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must

be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted

to <-0.5V.

BIASING GUIDELINES:

•

Active bias circuits provide good performance stabilization over variations of operating

temperature, but require a larger number of components compared to self-bias or dual-biased.

Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,

otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for

additional information.

•

Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage

supply for depletion-mode devices such as the FPD1000AS.

•

The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain

expansion prior to the onset of compression is normal for this operating point.

RECOMMENDED OPERATING BIAS CONDITIONS

•

Drain-Source Voltage:

From 5V to 10V

•

Quiescent Current:

From 25% IDSS to 55% IDSS

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