FPD1000AS datasheet(1/11 Pages) FILTRONIC

номер детали	FPD1000AS

подробное описание детали	1W PACKAGED POWER PHEMT

PDF	11 Pages

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производитель	FILTRONIC [Filtronic Compound Semiconductors]

домашняя страница	http://www.filtronic.co.uk/

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1W PACKAGED POWER PHEMT

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

1

Datasheet v3.0

FPD1000AS

FEATURES:

•

31 dBm Output Power (P1dB) @1.8GHz

•

15 dB Power Gain (G1dB) @ 1.8GHz

•

43 dBm Output IP3

•

-42 dBc WCDMA ACPR at 21 dBm PCH

•

10V Operation

•

50% Power-Added Efficiency

•

Evaluation Boards Available

•

Suitable for applications to 5 GHz

GENERAL DESCRIPTION:

The FPD1000AS is a packaged depletion

mode AlGaAs/InGaAs pseudomorphic High

Electron

Mobility

Transistor

(pHEMT),

optimized for power applications in L-Band.

The

surface-mount

package

has

been

optimized for low parasitics.

PACKAGE

YPICAL

APPLICATIONS:

in PCS/Cellular

•

T

•

Drivers or output stages

base station transmitter amplifiers

Power applications in WLL/WLAN and

WiMax amplifiers

ELECTRICAL SPECIFICATIONS:

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Power at 1dB Gain Compression

P1dB

VDS = 10V; IDS = 200 mA

ΓS and ΓL tuned for Optimum IP3

30

31

dBm

Power Gain at 1dB Gain Compression

G1dB

VDS = 10V; IDS = 200 mA

ΓS and ΓL tuned for Optimum IP3

13.5

15.0

Maximum Stable Gain

S21/S12

MSG

VDS = 10 V; IDS = 200mA

PIN = 0dBm, 50

Ω system

20

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

VDS = 10V; IDS = 200 mA

ΓS and ΓL tuned for Optimum IP3

50

%

3rd-Order Intermodulation Distortion

ΓS and ΓL tuned for Optimum IP3

IM3

VDS = 10V; IDS = 200 mA

POUT = 19 dBm (single-tone level)

-46

dBc

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

480

650

800

mA

Maximum Drain-Source Current

IMAX

VDS = 1.3 V; VGS

≅ +1 V

1100

mA

Transconductance

GM

VDS = 1.3 V; VGS = 0 V

720

mS

Gate-Source Leakage Current

IGSO

VGS = -3 V

20

50

µA

Pinch-Off Voltage

|VP|

VDS = 1.3 V; IDS = 2.4 mA

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

|VBDGS|

IGS = 2.4 mA

6

V

Gate-Drain Breakdown Voltage

|VBDGD|

IGD = 2.4 mA

20

V

Thermal Resistance (channel-to-case)

Θ

CC

See Note on following page

25

°C/W

Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)

Аналогичный номер детали - FPD1000AS

производитель	номер детали	датащи	подробное описание детали
Filtronic Compound Semi...	FPD1000AS	533Kb / 8P	1W PACKAGED POWER PHEMT

More results

Аналогичное описание - FPD1000AS

производитель	номер детали	датащи	подробное описание детали
Filtronic Compound Semi...	LP1500	40Kb / 2P	1W POWER PHEMT
	LP1500P100	48Kb / 3P	PACKAGED 1W POWER PHEMT
	LP3000P100	47Kb / 3P	PACKAGED 2W POWER PHEMT
List of Unclassifed Man...	TC2571	151Kb / 3P	1W Low-Cost Packaged PHEMT GaAs Power FETs
Filtronic Compound Semi...	FPD1000AS	533Kb / 8P	1W PACKAGED POWER PHEMT
	FPD1000V	197Kb / 3P	1W POWER PHEMT
	FPD1500P100	182Kb / 3P	1W PACKAGED POWER PHEMT
	FPD1500	156Kb / 3P	1W POWER PHEMT
Transcom, Inc.	TC3957	193Kb / 3P	1W Packaged Single-Bias PHEMT GaAs Power FETs
RF Micro Devices	FPD1500	242Kb / 4P	1W POWER pHEMT

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