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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
NC
RF IN1
RF IN2
NC
NC
RF OUT2
RF OUT1
NC
NC
NC
1
2
3
4
6
7
8
9
15
14
13
12
19
18
17
16
5
10
11
20
RF3867
DUAL-CHANNEL, WIDE BANDWIDTH,
HIGH LINEARITY LOW NOISE AMPLIFIER
The RF3867 is a dual-channel version of the RF3863 with a low noise
amplifier and a high output IP3. The amplifier is self-biased from a single
voltage supply with 50
Ω input and output ports. The useful frequency
range is from 700MHz to 3800MHz. A 0.8dB noise figure and 36dBm
OIP3 performance is achieved with a 5V VDD, 180mA. Current can be
increased to raise OIP3 while having minimal effect on noise figure. The IC
is featured in a standard QFN, 20-pin, 5mmx5mm package.
Features
Dual-Channel
Low Noise and High Intercept
Point
Adjustable Bias Current
Single 2.5V to 6.0V Power
Supply
700MHz to 3800MHz Opera-
tion
Small QFN20 5mmx5mm
Package
Applications
CDMA,PCS,DCS,UMTS LNA
WLAN LNA
General Purpose Amplifica-
tion
RF3867
Dual-Channel, Wide Bandwidth, High Linearity Low Noise
Amplifier
RF3867PCK-410
Fully Assembled Evaluation Board with 5 Sample Parts
1.5GHz to 2.7GHz
RF3867PCK-411
3.3GHz to 3.8GHz
RF3867PCK-412
700MHz to 1100MHz
Rev A0 DS070808
Package Style: QFN, 20-Pin, 5mmx5mm
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