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RF3867 датащи(PDF) 5 Page - RF Micro Devices

номер детали RF3867
подробное описание детали  DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER
PDF  8 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3867 датащи(HTML) 5 Page - RF Micro Devices

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RF3867
Rev A0 DS070808
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Evaluation Board Schematic
700MHz to 1100MHz, 1500MHz to 2700MHz, and 3300MHz to 3800MHz
1
2
3
4
6
7
8
9
15
14
13
12
19
18
17
16
5
10
11
20
L3
L4
C2
R2
L1
C4
10 pF
C1
10 nF
VDD2
50
Ω μstrip
J3
RF OUT2
50
Ω μstrip
J4
RF OUT1
L2
C8
10 pF
C9
10 nF
VDD1
R3
C5
RF IN1
RF IN2
C3
C6
R2 and R3 are DNP for typical 90 mA per channel current draw. If R2 or R3 is added,
the channel IDD will increase. A 10 Ω R2 or R3 will raise the current of a channel
to achieve higher linearity.
Note 1: For low band add a series 6.8 nH inductor on RF IN, and a shunt 15 nH inductor on RF OUT.
Inductors should be placed as close as possible to the part.
Note 2: The topology of L3, L4, C5, and C6 in the mid and high bands. They must be as shown in the chart.
1.5
High Band
3300 MHz to 3800 MHz
Component
L1, L2 (nH)
100 pF
L4, L3 (nH)
Mid Band
1500 MHz to 2700 MHz
Low Band
700 MHz to 1100 MHz
12
56
100 pF
22
12 nH
C5, C6 (pF)
4.7 nH
100
DNP
C2, C3 (pF)
12
6.8
DNP
R2, R3 (
Ω)
DNP
DNP
0
R1 (
Ω)
0
0
See note 1



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