| поискавой системы для электроныых деталей |
|
TH8082KDC датащи(PDF) 5 Page - Melexis Microelectronic Systems |
|
|
|||||||||||||||||||||||||||||
TH8082KDC датащи(HTML) 5 Page - Melexis Microelectronic Systems |
|
5 / 26 page ![]() TH8082 Enhanced SoloLIN Transceiver TH8082 – Datasheet Page 5 of 26 3901008082 Feb 2007 Rev 007 2. Electrical Specification All voltages are referenced to ground (GND). Positive currents flow into the IC. The absolute maximum ratings (in accordance with IEC 60 134) given in the table below are limiting values that do not lead to a permanent damage of the device but exceeding any of these limits may do so. Long term exposure to limiting values may effect the reliability of the device. 2.1 Operating Conditions Parameter Symbol Min Max Unit Battery supply voltage [1] VS 7 18 V Supply voltage VCC 4.5 5.5 V Operating ambient temperature Tamb -40 +125 °C [1] Vs is the IC supply voltage including voltage drop of reverse battery protection diode, VDROP = 0.4 to 1V, VBAT_ECU voltage range is 8 to 18V 2.2 Absolute Maximum Ratings Parameter Symbol Condition Min Max Unit t < 1 min 30 Battery Supply Voltage VS Load dump, t < 500ms -0.3 40 V Supply Voltage VCC -0.3 +7 V Transient supply voltage VS.tr1 ISO 7637/1 pulse 1[1] -150 V Transient supply voltage VS..tr2 ISO 7637/1 pulses 2[1] 100 V Transient supply voltage VS..tr3 ISO 7637/1 pulses 3A, 3B -150 150 V t < 500ms , Vs = 18V -27 BUS voltage VBUS t < 500ms ,Vs = 0V -40 40 V Transient bus voltage VBUS..tr1 ISO 7637/1 pulse 1 [2] -150 V Transient bus voltage VBUS.tr2 ISO 7637/1 pulses 2 [2] 100 V Transient bus voltage VBUS.tr3 ISO 7637/1 pulses 3A, 3B [2] -150 150 V DC voltage on pins TxD, RxD VDC -0.3 7 V ESD capability of pin LIN, VS, INH ESDHB Human body model, equivalent to discharge 100pF with 1.5k Ω, -4 4 kV ESD capability of pin RxD, TxD, VCC ESDHB Human body model, equivalent to discharge 100pF with 1.5k Ω, -2 2 kV Maximum latch - up free current at any Pin ILATCH -500 500 mA Thermal impedance ΘJA in free air 152 K/W Storage temperature Tstg -55 +150 °C Junction temperature Tvj -40 +150 °C [1] ISO 7637 test pulses are applied to VS via a reverse polarity diode and >2uF blocking capacitor. [2] ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1 nF. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |