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STTH1003S-Y датащи(PDF) 2 Page - STMicroelectronics |
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STTH1003S-Y датащи(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage, Tj = -40 °C to +175 °C 300 V IF(RMS) Forward rms current 20 A IF(AV) Average forward current, δ = 0.5, square wave TC = 150 °C 10 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 100 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -40 to +175 °C Table 2. Thermal parameters Symbol Parameter Maximum value Unit Rth(j-c) Junction to case 4 °C/W For more information, refer to the following application note : • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM - 10 µA Tj = 125 °C - 10 100 VF (2) Forward voltage drop Tj = 25 °C IF = 10 A - 1.30 V Tj = 125 °C - 0.90 1.10 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp =380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.86 x IF(AV) + 0.024 x IF 2 (RMS) For more information, refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN5028: Calculation of turn-off power losses generated by an ultrafast diode Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 0.5 A, Irr = 0.25 A, IR = 1 A - 13 17 ns IF = 1 A, VR = 30 V, dIF/dt = -50 A/µs - 28 35 IRM Reverse recovery current Tj = 125 °C IF = 10 A, VR = 200 V, dlF/dt = 200 A/µs - 5.7 7.5 A Sfactor Softness factor - 0.3 - tfr Forward recovery time Tj = 25 °C IF = 10 A, VFR = 1.1 x VFmax, dlF/dt = 100 A/µs 200 ns VFP Forward recovery voltage IF = 10 A, dlF/dt = 100 A/µs 2.5 3.5 V STTH1003S-Y Characteristics DS8767 - Rev 4 page 2/10 |
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