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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TLV3541IDBVT датащи(PDF) 7 Page - Texas Instruments |
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TLV3541IDBVT датащи(HTML) 7 Page - Texas Instruments |
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7 / 45 page  7 TLV3541, TLV3542, TLV3544 www.ti.com SBOS756 – OCTOBER 2016 Product Folder Links: TLV3541 TLV3542 TLV3544 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 6.7 Electrical Characteristics: VS = 2.7 V to 5.5 V Single-Supply at TA = 25°C, RF = 0 Ω, RL = 1 kΩ, and connected to VS / 2 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OFFSET VOLTAGE VOS Input offset voltage VS = 5 V, at TA = 25°C ±2 ±10 mV dVOS/dT Input offset voltage vs temperature VS = 5 V, at TA = −40°C to +125°C ±4.5 μV/°C PSRR Input offset voltage vs power supply VS = 2.7 V to 5.5 V, VCM = (VS / 2) − 0.55 V 60 70 dB INPUT BIAS CURRENT IB Input bias current 3 pA IOS Input offset current ±1 pA NOISE en Input voltage noise density f = 1 MHz 7.5 nV/ √Hz in Current noise density f = 1 MHz 50 fA/ √Hz INPUT VOLTAGE RANGE VCM Common-mode voltage range (V −) − 0.1 (V+) + 0.1 V CMRR Common-mode rejection ratio VS = 5.5 V, –0.1 V < VCM < 3.5 V, at TA = 25°C 66 80 dB VS = 5.5 V, –0.1 V < VCM < 5.6 V, at TA = 25°C 56 68 dB INPUT IMPEDANCE Differential 1013 || 2 Ω || pF Common-mode 1013 || 2 Ω || pF OPEN-LOOP GAIN AOL Open-loop gain VS = 5 V, 0.3 V < VO < 4.7 V, at TA = 25°C 92 108 dB FREQUENCY RESPONSE f−3dB Small-signal bandwidth At G = +1, VO = 10 mV RF = 25 Ω 200 MHz At G = +2, VO = 10 mV 90 MHz GBW Gain-bandwidth product G = +10 100 MHz f0.1dB Bandwidth for 0.1-dB gain flatness At G = +2, VO = 10 mV 40 MHz SR Slew rate VS = 5 V, G = +1, 4-V step 150 V / μs VS = 5 V, G = +1, 2-V step 130 V / μs Rise-and-fall time At G = +1, VO = 200 mVPP, 10% to 90% 2 ns At G = +1, VO = 2 VPP, 10% to 90% 11 ns Settling time 0.1%, VS = 5 V, G = +1, 2-V output step 30 ns 0.01%, VS = 5 V, G = +1, 2-V output step 60 ns Overload recovery time VIN × Gain = VS 5 ns |
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