Characteristics

STTH1R04-Y

2/12

DocID024449 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 °C to +175 °C

400

V

IF(AV)

Average forward current,

δ = 0.5, square wave

SMA

Tl = 130 °C

1.0

A

SMB

Tl = 140 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

30

A

tp = 8.3 ms sinusoidal

37

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature(1)

-40 to +175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Maximum value

Unit

Rth(j-l)

Junction to lead

SMA

30

°C/W

SMB

25

Table 4: Static electrical characteristics ( per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

5

µA

Tj = 125 °C

-

5

50

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1 A

-

1.30

1.60

V

Tj = 100 °C

-

1.05

1.30

Tj = 150 °C

-

0.90

1.15

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.9 x IF(AV) + 0.250 x IF2(RMS)