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STTH1R04AY датащи(PDF) 5 Page - STMicroelectronics

номер детали STTH1R04AY
подробное описание детали  Automotive ultrafast recovery diode
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH1R04AY датащи(HTML) 5 Page - STMicroelectronics

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STTH1R04-Y
Characteristics
DocID024449 Rev 2
5/12
Figure 7: Reverse recovery time versus dIF / dt
(typical values)
Figure 8: Peak reverse recovery current versus
dIF / dt (typical values)
Figure 9: Relative variation of dynamic parameters
versus junction temperature
Figure 10: Transient peak forward voltage versus
dIF / dt (typical values)
Figure 11: Forward recovery time versus dIF / dt
(typical values)
Figure 12: Thermal resistance junction to ambient
total versus copper surface under each lead (SMA)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
10
100
1000
t
RR(ns)
I
F= 1 A
V
R =320 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
100
1000
I
RM(A)
I
F= 1 A
V
R =320 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR; IRM [T j] / QRR; IRM [T j=125°C]
I
R M
Q
R R
I
F= 1 A
V
R =320 V
Tj(°C)
Q
RR; IRM [T j] / QRR; IRM [T j=125°C]
0
5
10
15
20
25
30
0
50
100
150
200
250
300
350
400
450
500
V
Fp(V)
I
F=1 A
T
j=125 °C
dIF/dt(A/µs)
0
5
10
15
20
25
30
35
40
45
50
55
0
50
100
150
200
250
300
350
400
450
500
t
FR(ns)
I
F=1 A
T
j=125 °C
dIF/dt(A/µs)
R
th (j -a) ( C/W)
°
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
CU(cm²)
SMA
epoxy printed board FR4, copper thickness Cu = 35 µm



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