Features

•

AEC-Q101 qualified and PPAP capable

•

No reverse recovery charge in application current range

•

Switching behavior independent of temperature

•

High forward surge current capability

•

Operating Tj from -55 °C to 175 °C

•

ECOPACK2 compliant component

Applications

•

On board charger (OBC)

•

On-board DC/DC converters

•

EV Charging station

•

Rotor H-Bridge of wound-rotor synchronous motor (WRSM)

Description

The SiC diode STPSC30G065-Y, available in DO-247 LL with long leads, is an

ultrahigh performance power Schottky rectifier. It is manufactured using a silicon

carbide substrate. The wide band-gap material allows the design of a low VF

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge

current capability, making it ideal for use in PFC, where this ST SiC diode boosts the

performance in hard switching conditions. Using the latest design improvement of the

“G” series of ST SiC diodes, as well as implemented tests in production, this diode is

becoming the reference point in the combination of efficiency and application

robustness to the application design.

A

K

DO-247 LL

A

K

K

Product label

Product status link

STPSC30G065-Y

Product summary

IF(AV)

30 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

STPSC30G065-Y

Datasheet

DS14852 - Rev 3 - September 2025

For further information, contact your local STMicroelectronics sales office.

www.st.com