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STGW50H65DFB2-4 датащи(PDF) 3 Page - STMicroelectronics

номер детали STGW50H65DFB2-4
подробное описание детали  Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGW50H65DFB2-4 датащи(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 1 mA
650
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 50 A
1.55
2
V
VGE = 15 V, IC = 50 A,
TJ = 125 °C
1.8
VGE = 15 V, IC = 50 A,
TJ = 175 °C
1.9
VF
Forward on-voltage
IF = 50 A
1.85
2.45
V
IF = 50 A, TJ = 125 °C
1.65
IF = 50 A, TJ = 175 °C
1.45
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
5
6
7
V
ICES
Collector cut-off current
VGE = 0 V, VCE = 650 V
25
µA
IGES
Gate-emitter leakage current
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
-
2928
-
pF
Coes
Output capacitance
-
162
-
Cres
Reverse transfer capacitance
-
78
-
Qg
Total gate charge
VCC = 520 V, IC = 50 A,
VGE = 0 to 15 V
(see Figure 29. Gate charge test
circuit)
-
151
-
nC
Qge
Gate-emitter charge
-
30
-
Qgc
Gate-collector charge
-
63
-
STGW50H65DFB2-4
Electrical characteristics
DS13420 - Rev 1
page 3/15



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