1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

V

IC

Continuous collector current at TC = 25 °C

86

A

Continuous collector current at TC = 100 °C

53

ICP (1)(2)

Pulsed collector current

150

VGE

Gate-emitter voltage

±20

V

Transient gate-emitter voltage (tp ≤ 10 μs)

±30

IF

Continuous forward current at TC = 25 °C

60

A

Continuous forward current at TC = 100 °C

38

IFP(1)

Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C)

150

PTOT

Total power dissipation at TC = 25 °C

272

W

TSTG

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

-55 to 175

1. Defined by design, not subject to production test.

2. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.55

°C/W

Thermal resistance junction-case diode

1.14

RthJA

Thermal resistance junction-ambient

50

STGW50H65DFB2-4

Electrical ratings

DS13420 - Rev 1

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