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ICS87421AMILF датащи(PDF) 10 Page - Integrated Device Technology |
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ICS87421AMILF датащи(HTML) 10 Page - Integrated Device Technology |
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10 / 14 page ![]() IDT™ / ICS™ LVDS CLOCK GENERATOR 10 ICS87421AMI REV. A OCTOBER 3, 2007 ICS87421I ÷1/÷2 DIFFERENTIAL-TO-LVDS CLOCK GENERATOR POWER CONSIDERATIONS This section provides information on power dissipation and junction temperature for the ICS87421I. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the ICS87421I is the sum of the core power plus the power dissipated in the load(s). The following is the power dissipation for V DD = 3.3V + 5% = 3.465V, which gives worst case results. • Power_ MAX = V DD_MAX * I DD_MAX = 3.465V * 55mA = 198.58mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiPerClockS TM devices is 125°C. The equation for Tj is as follows: Tj = θ JA * Pd_total + TA Tj = Junction Temperature θ JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) T A = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance θ JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 96°C/W per Table 6 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.199W * 96°C/W = 104.1°C. This is well below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow, and the type of board (single layer or multi-layer). TABLE 6. THERMAL RESISTANCE θθθθθ JA FOR 8-PIN SOIC, FORCED CONVECTION θθθθθ JA by Velocity (Meters per Second) 0 1 2.5 Multi-Layer PCB, JEDEC Standard Test Boards 96°C/W 87°C/W 82°C/W |
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